摘要
Third generation semiconductors for piezotronics and piezo-phototronics,such as Zn O and Ga N,have both piezoelectric and semiconducting properties.Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junctions,contacts and interfaces.The distribution width of piezoelectric charges in a junction is one of important parameters.Capacitance-voltage(C-V)characteristics can be used to estimate the distribution width of strain-induced piezoelectric charges.Piezotronic metal–insulator-semiconductor(MIS)has been modelled by analytical solutions and numerical simulations in this paper,which can serve as guidance for C-V measurements and experimental designs of piezotronic devices.
压电半导体具有压电效应和半导体电学特性,可以用于压电电子学器件和压电光电子学器件.压电电子学器件和压电光电子学器件利用外加应变产生的压电电荷调控压电电子学pn结、金属半导体(M-S)接触的载流子传输、分离、复合等过程.压电电子学器件具有灵敏度高、响应速度快和功耗超低的优点,非常适合在自驱动系统中应用,因此在物联网、可穿戴系统、植入式传感系统具有巨大的应用价值.压电电荷的分布宽度能够显著影响压电电子学器件的传感性能,是压电电子学器件重要参数之一.压电电荷的分布宽度则可以通过压电电子学器件的电容电压(C-V)特性获得.本文以压电电子学金属-绝缘体-半导体(MIS)晶体管为例,提出对压电电荷分布影响进行测量和计算的理论模型,并进行了数值模拟,为以C-V测量为基础的结区压电电荷分布宽度实验设计给出了可行的理论方案.
作者
Jiayang Zheng
Yongli Zhou
Yaming Zhang
Lijie Li
Yan Zhang
郑嘉扬;周永利;张亚明;李立杰;张岩(School of Physics,University of Electronic Science and Technology of China,Chengdu 610054,China;Department of Computer Science,University of Rochester,Rochester,NY 14627,USA;Beijing Institute of Nanoenergy and Nanosystems,Chinese Academy of Sciences,Beijing 100083,China;Multidisciplinary Nanotechnology Centre,College of Engineering,Swansea University,Swansea SA18EN,UK;College of Nanoscience and Technology,University of Chinese Academy of Sciences,Beijing 100049,China)
基金
the support from Swansea University,Solar Photovoltaic Academic Research Consortium(SPARC)Ⅱproject
University of Electronic Science and Technology of China.
