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晶格受限Ga~Ⅲ诱导Pt高分散及其催化重整性能 被引量:2

Single atom and small cluster Pt induced by lattice-confined GaⅢ improving i-C7 selectivity in catalytic reforming
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摘要 针对催化重整反应中由于Pt分散度低引起氢解等副反应导致异构烷烃选择性差的问题,本文提出利用受限于层状双金属氢氧化物(LDHs)主体层板晶格内的GaⅢ对Pt的诱导效应控制Pt在载体表面原子水平高分散,Pt分散度达到98.8%,其中单原子Pt比例占68%.应用于正庚烷重整反应,高分散的Pt能够有效地抑制氢解副反应和芳构化反应,并大幅度提高异构选择性,在50%转化率下获得了53%的i-C7选择性,同时C1~4产物选择性小于20%. Conventional supported Pt catalysts for the industrially catalytic reforming present high conversion but low selectivity due to hydrogenolysis reaction.The development of highly dispersed Pt provides the opportunities to solve this problem.In this article,supported Pt catalyst with Pt dispersed in single atoms(68%)on GaⅢ-containing mixed metal oxides was prepared through the inducement effect of Ga confined in the lattices of brucite-like layers of layered double hydroxides(LDHs).Applied in the n-heptane reforming reaction,highly-dispersed Pt effectively inhibited the hydrogenolysis reaction and aromatization,and significantly improved the selectivity to i-C7 product.At a stable nheptane conversion of 50%,an i-C7 selectivity of 53%could be obtained with a C1–4 by-product selectivity lower than 20%.
作者 王文龙 安哲 朱彦儒 宋红艳 何静 Wenlong Wang;Zhe An;Yanru Zhu;Hongyan Song;Jing He(State Key Laboratory of Chemical Resource Engineering,Beijing University of Chemical Technology,Beijing 100029,China;Beijing Advanced Innovation Center for Soft Matter Science and Engineering,Beijing University of Chemical Technology,Beijing 100029,China)
出处 《中国科学:化学》 CAS CSCD 北大核心 2020年第2期306-314,共9页 SCIENTIA SINICA Chimica
基金 国家重点研发计划(编号:2017YFA0206804) 国家自然科学基金(编号:91634120,21521005)资助项目.
关键词 PT催化剂 高分散 正庚烷重整 晶格限域 Ga助剂 层状双金属氢氧化物 Pt catalyst highly-dispersed n-heptane reforming reaction lattice confinement Ga promoter layered double hydroxides
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