摘要
We report 25 Gb/s high-speed directly modulated ground-state operation of 1.3 μm In As/Ga As quantum dot(QD) lasers grown by molecular beam epitaxy. The active region of the lasers consists of eight layers of p-doped In As QDs with high uniformity and density. Ridge-waveguide lasers with a 3-μm-wide and 300-μm-long cavity show a low threshold current of 14.4 m A at 20°C and high temperature stability with a high characteristic temperature of 1208 K between 20°C and 70°C. Dynamic response measurements demonstrate that the laser has a 3 d B bandwidth of 7.7 GHz at 20°C and clearly opened eye diagrams even at high temperatures up to 75°C under a 25 Gb/s direct modulation rate.
作者
Zhongkai Zhang
Zunren Lü
Xiaoguang Yang
Hongyu Chai
Lei Meng
Tao Yang
张中恺;吕尊仁;杨晓光;柴宏宇;孟磊;杨涛(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)
基金
supported by the National Key Research&Development(R&D)Program of China(No.2016YFB0402302)
the National Natural Science Foundation of China(Nos.91433206,61574139 and61841403)
