期刊文献+

透明导电薄膜ZnO∶Al的组织结构分析

Analysis on the Microstructure of Transparent Conductive Oxide ZnO:Al Thin Films
在线阅读 下载PDF
导出
摘要 Zno∶Al(ZAO)透明导电薄膜具有高的载离子浓度和大的光学禁带宽度,因而具有优异的电学和光学性能,极具应用价值.本文研究了ZAO薄膜的微观组织结构、化学成分、及其应用前景. Transparent conductive ZnO∶Al(ZAO) thin films are semi-conductor oxides with both high carrier concentration and large optical band gap.ZAO films have outstooding electrical and optical properties,and are emerging as a most potential alternative candidate for transparent conducting material.The preparation status of ZAO films is introduced.The micro-structure and their applicating prospect and the proposal for the future research are described.
出处 《山西师范大学学报(自然科学版)》 2006年第2期32-36,共5页 Journal of Shanxi Normal University(Natural Science Edition)
基金 重庆市教委资助项目(040810)
关键词 ZAO薄膜 形态结构 化学成份 应用前景 ZAO preparation status micro-structure research proposal
  • 相关文献

参考文献26

  • 1[1]Yoo J,Lee J,Kim S,et al.High transmittance and low resistive ZnO:Al films for thin film solar cells[J].Thin Solid Films,2005,480-481:213~217.
  • 2[2]Hu J,Gordon R G.Textured aluminum-doped zinc oxide thin films from atmospheric pressure chemical-vapor deposition[J].Appl.Phys,1992,71(2):880~890.
  • 3[3]Lee J H,Park B O.Transparent conducting ZnO∶Al,In and Sn thin films deposited by the sol-gel method[J].Thin Solid Films,2003,426:94~99.
  • 4[4]Hideaki A,Akio S,Tatsuhiko M,et al.Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition.Thin Solid Films,2003,445:263~267.
  • 5[5]Tsujino J,Homma N,Sugawara T,et al.Preparation of Al-doped ZnO thin films by RF thermal plasma evaporation[J].Thin Solid Films,2002,407:86~91.
  • 6[6]Nunes P.Performances presented by zinc oxide thin films deposited by spray pyrolysis[J].Thin Solid Films,1999,337:176~179.
  • 7[7]Jeong S H,Boo J H.Influence of target-to-substrate distance on the properties of AZO films grown by RF magnetron sputtering[J].Thin Solid Films,2004,447-448:105~110.
  • 8[8]Herrmann D,Oertel M,Menner R,et al.Analysis of relevant plasma parameters for ZnO:Al film deposition based on data from reactive and non-reactive DC magnetron sputtering[J].Surface & Coatings Technology,2003,174-175:39~47.
  • 9[9]Chen M,Pei Z L,Sun C,et al.Formation of Al-doped ZnO films by dc magnetron reactive sputtering[J].Materials Letters,2001,48:194~198.
  • 10[10]Hong R J,Jiang X,Szyszka B,et al.Comparison of the ZnO:Al films deposited in static and dynamic modes by reactive mid-frequency magnetron sputtering[J].J Crystal Growth,2003,253:117~128.

二级参考文献15

  • 1陈猛,博士学位论文,1999年
  • 2Yang T L,Thin Solid Films,1998年,326卷,60页
  • 3姜燮昌,真空,1995年,6卷,1期,1页
  • 4Fan J C C,J Appl Phys,1977年,48期,3524页
  • 5Tang W, Cameron D C. Aluminum-doped zinc oxide transparent conductors deposited by the sol-gel process[J]. Thin Solid Films, 1994,238:83-87.
  • 6Ning Z Y, Cheng S H, Ge S B,et al. Preparation and characterization of ZnO:Al films by pulsed laser deposition[J]. Thin Solid Films, 1997,307:50-53.
  • 7Tzolov M, Tzenov N, Dimova D. Modification of the structure of ZnO:Al films by control of the plasma parameters[J]. Thin Solid Films, 2001,396:274-279.
  • 8Hu J, Gordon R G. Textured aluminum-doped zinc oxide thin films from atmospheric pressure chemical-vapor deposition[J]. Appl Phys, 1992,71(2):880-890.
  • 9Minami T, Nanto H, Sato H,et al. Effect of applied external magnetic field on the relationship between the arrangement of the substrate and the resistivity of aluminum-doped ZnO thin films prepared by rf magnetron sputtering[J]. Thin Solid Films, 1988,164:275-279.
  • 10Igasaki Y, Ishikawa M, Shimaoka G. Some properties of Al-doped ZnO transparent conducting films prepared by rf reactive sputtering[J]. Applied Surface Science, 1988,33:926-933.

共引文献40

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部