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碲锌镉晶体第二相夹杂物特性研究 被引量：1

Characteristic study of inclusions in CZT crystal
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摘要 高质量的碲锌镉单晶是制备碲镉汞红外焦平面器件的理想衬底材料,然而目前碲锌镉材料中的第二相夹杂物严重制约着晶体的质量.根据红外透射形貌的描述和表征,碲锌镉晶体的常见夹杂物被分成了五类,并在此基础上讨论了各自的形成机制,A、B和C类夹杂物与化学配比及其变化密切相关,而D和E类夹杂物与源材料中或者在生长工艺控制过程中氧含量相关.进一步的研究表明大尺寸、高密度的Te夹杂物将会严重降低红外透过率,同时腐蚀坑密集分布在与Cd夹杂对应的六重对称线上,该结果揭示了第二相夹杂物会产生其他缺陷的增殖,但夹杂物引起的应力影响区域是局限的.
作者 刘从峰 孙士文 方维政 杨建荣 何力
机构地区 中国科学院上海技术物理研究所功能材料与器件研究中心
出处 《红外与激光工程》 EI CSCD 北大核心 2007年第z1期46-49,共4页 Infrared and Laser Engineering
基金 国家自然科学基金资助项目(60606026)
关键词 第二相夹杂物 碲锌镉 腐蚀坑 碲镉汞红外焦平面
分类号 TN304 [电子电信—物理电子学]
  • 相关文献

参考文献9

  • 1[1]RACCAH P M,LEE U.Comparative studies of mercury cadmium telluride single crystal and epitaxial[J].J Vac Sci Teclmol,1983,A1(3):1587-1592.
  • 2[2]FAURIE J P MILLION A,BOCH R,et al.Latest developments in the growth of CdxHg1-xTe and CdTe-HgTe superlattices by molecular beam epitaxy[J].J Vae Sci Technol,1983,A1(3):1593-1597.
  • 3[3]SEN S,LIANG C S,RHIGER D R,et al.Reduction of CdZnTe Substrate defects and relation to epitaxial HgCdTe quality[J].J Electron Mater,1996,25(8):1188-1195.
  • 4[4]JAMES R B,SCHLESINGER T E,LUND J,et al.Cd1-xZnxTe Spectrometers for Gamma and X-Ray Applications[C]//Semiconductors for Room Temperature Nuclear Detector Applications,Semiconductors and Semimetals,New York,Academic Press,1995,43:335-381.
  • 5[5]SEN S,STANNARD J E.Improved quality of bulk Ⅱ-Ⅵ substrates for HgCdTe and HgZnTe epitaxy[J].Mat Res Soc Syrup,1993,302:391-401.
  • 6[6]BELL S L,SEN S.Crystal frowth of Cd1-xZnxTe and its use as a superior substrate for LPE growth of Hg0.8Cd0.2Te[J].J Vac Sci Technol,1985,A3(1):112-115.
  • 7[7]YADAVA R D S,BAGAI R k BORLE W N.Teeory of Te Precipitation and Related Effects in CdTe Crystals[J].J Electron Mater,1992,21(10):1001-1016.
  • 8刘从峰,方维政,涂步华,孙士文,杨建荣,何力.碲锌镉晶体常用腐蚀剂的坑形特性研究[J].红外与激光工程,2006,35(6):759-763. 被引量：5
  • 9[9]BRION H G,MEWES C,HAHN I,et al.Infrared contrast of inclusions in CdTe[J].J Cryst Growth,1993,134(3-4):281-286

二级参考文献14

  • 1ROGALSKI A.Infrared detectors:an overview[J].Infrared Physics and Technology,2002,43(3):187-210.
  • 2ROGALSKI A.Infrared detectors:status and trend[J].Progress in Quantum Electronics,2003,27(2):59-210.
  • 3RACCAH P M,LEE U.Comparative studies of mercury cadmium telluride single crystal and epitaxial[J].J Vac Sci Technol,1983,A1(3):1587-1592.
  • 4ZANIO K.Semiconductor and Semimetals,Vol,13[M].New York:Academic Press,1978.
  • 5Morio Inoue,Iwao Teramoto,Shigetoshi Takayanagi.Etch pits and Polarity in CdTe crystals[J].J Appl Phys,1962,33:2578-2582.
  • 6NAKAGAWA K,MAEDA K,TAKEUCHI S.Observation of dislocafons in cadmium telluride by cathodoluminescence microscopy[J].Applied Physics Letter,1979,34(9):574-575.
  • 7EVERSON W J,ARD C K,SEPICH J L,et al.Etch pit characterization of CdTe and CdZnTe substrates for use in Mercury Cadmium Telluride Epitaxy[J].Journal of Electronic Materials,1995,24(5):505-510.
  • 8WADA M,SUZUKI J.Characterization of Te precipitates in CdTe crystals[J].J Appl Phys(Japan),1988,27:L972-L975.
  • 9YANG Jian-rong,GU Hu-ming,CHEN Xin-qiang,et al.Dislocation assessment of CdZnTe by chemical etching on both{111}B and {211}B faces[J].J Crystal Growth,2002,234:337-342.
  • 10LU Y-C,ROUTE R K,ELWELL D,et al.Etch pit studies in CdTe crystals[J].J Vac Sci Technol,1985,A3(1):264-270.

共引文献4

同被引文献11

  • 1闵嘉华,桑文斌,刘洪涛,钱永彪,滕建勇,樊建荣,李万万,张斌,金玮.热处理方法改善CdZnTe晶体性能研究(英文)[J].稀有金属材料与工程,2007,36(3):471-474. 被引量：3
  • 2MIN J H, CHEN J, LIANG X Y, et al. Effects of gradient heat treatment on Te-rich CdZnTe crystal [J]. Vacuum, 86(7): 994-997.
  • 3SHIN H Y, SUN C Y. Temperature-gradient-solution grown CdTe crystals for γ-ray detectors [J]. Journal of Crystal Growth, 1998, 186: 67-78.
  • 4LIMOUSIN O. New trends in CdTe and CdZnTe detectors for X- and gamma-ray applications [J]. Nucl Instrument Methods Phys Res A, 2003, 504: 24-37.
  • 5CZOCK K H, ARLT R. Use of CdZnTe detectors to analyze gamma emission of safeguards samples in the field [J]. Nucl Instrument Methods Phys Res A, 2001, 458: 175-182.
  • 6FIEDERLE M, FELTGEN T, MEINHARDT J, et al. State of the art of (Cd,Zn) Te as gamma detector [J]. Journal of Crystal Growth, 1999, 197: 635-640.
  • 7TURJANSKA L, HOSCHL P, BELAS E, et al. Defect structure of CdZnTe [J]. Nucl Instrument Methods Phys Res A, 2001, 458: 90-95.
  • 8Hu S Y, HENAGER C H, Jr. Phase-field simulations of Te-precipitate morphology and evolution kinetics in Terich CdTe crystals [J]. Journal of Crystal Growth, 2009, 311: 3184-3194.
  • 9HOSSAIN A, Xu L, BOLOTNIKOV A E, et al. Distribution of Te inclusions in a CdZnTe wafer and their effects on the electrical properties of fabricated devices [J]. Nucl Instrument Methods Phys Res A, 2011, 652: 146- 148.
  • 10MIN Jiahua,SHI Zhubin,QIAN Yongbiao,SANG Wenbin,ZHAO Hengyu,TENG Jianyong,LIU Jishan.Simulation of the anode structure for capacitive Frisch grid CdZnTe detectors[J].Nuclear Science and Techniques,2009,20(1):46-50. 被引量：2

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红外与激光工程
2007年 第z1期

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