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籽晶分步包膜法掺杂改进ZnO的压敏电阻特性

Property of ZnO Varistors Prepared by Fractional Precipitation on Seed Materials
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摘要 通过籽晶分步包膜法ZnO复合掺杂物制备技术的研究,以及与其他三种不同工艺方法处理ZnO压敏电阻片掺杂物复合粉体的对比,特别是在复合掺杂物性能、混合浆料性能、喷雾造粒性能、电气性能和显微结构等方面的对比,得出籽晶分步包膜沉淀可以获得离子级混合均匀的ZnO复合掺杂物,经过喷雾造粒提高成型性能.最终,使ZnO压敏电阻片电位梯度和能量吸收能力得到了显著提高,分别达到2.6kV/cm和270J/cm3.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2007年第z1期312-315,共4页 半导体学报(英文版)
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参考文献12

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