摘要
为了研究静电放电注入时损伤电压与损伤能量之间的关系,本文进行静电放电电压与注入的平均峰值 能量之间的对应关系研究．实验采用静电放电模拟器在人体模型下对几种集成电路器件进行注入放电,通过 Agilent inifniium示波器记录并计算得到静电放电注入时相应的能量波形,取五次能量峰值的平均值记为该电压 下注入的峰值能量,采用曲线拟合的方法,得到注入的静电电压与平均峰值能量之间的关系表达式．
In order to research the relationship between electrostatic discharges (ESD) injected damage voltage and damage energy, the parallelism relationship between ESD voltages and injected average peak energy was studied. The experiment adopts ESD simulator to inject under the human body model (HBM) into some kinds of integrated circuit (IC) devices. Using agilent inifniium oscillograph, the energy waveform can be recorded and calculated correspond to the ESD injected voltage. The average of five peak energy values was taken to be the injected average peak energy value under this voltage. Adopting the curve fitting method, the relationship expression between the ESD voltage and the injected average peak energy was abtained.
出处
《北京理工大学学报》
EI
CAS
CSCD
北大核心
2005年第z1期77-80,共4页
Transactions of Beijing Institute of Technology
基金
国家自然基金重点项目(50237040)
关键词
集成电路
静电放电
注入电压
平均峰值能量
integrated circuit
electrostatic discharge
injected voltage
average peak energy
