Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique

Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique

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摘要 In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 μm. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer. In this paper we propose a new method for measuring the thickness of the GaN epilayer, by using the ratio of the integrated intensity of the GaN epilayer X-ray diffraction peaks to that of the sapphire substrate ones. This ratio shows a linear dependence on the GaN epilayer thickness up to 2 μm. The new method is more accurate and convenient than those of using the relationship between the integrated intensity of GaN epilayer diffraction peaks and the GaN thickness. Besides, it can eliminate the absorption effect of the GaN epilayer.

作者冯淦朱建军沈晓明张宝顺赵德刚王玉田杨辉梁骏吾

机构地区 State Key Laboratory on Integrated Optoelectronics

出处《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS 2003年第4期437-440,共4页 中国科学：物理学、力学、天文学（英文版）

基金 the National Natural Science Foundation of China(Grant No.69825107,NSFC-RGC Joint program:NSFC5001161953 and N_HKU028/00)

关键词 GaN X-RAY diffraction thickness GaN X-ray diffraction thickness

分类号 O434.12 [机械工程—光学工程]

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Thickness measurement of GaN epilayer using high resolution X-ray diffraction technique

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