摘要
掺硼金刚石膜由于具有金属的电导率,在电学和电化学领域已显示出广阔的应用前景。在掺硼金刚石膜的制备工艺中,掺硼浓度对金刚石膜形貌具有一定影响。通过采用自制的热丝CVD金刚石沉积设备,采用三氧化二硼固体源制备掺硼金刚石膜,在其他工艺参数一致的情况下,改变硼源量制备不同掺硼浓度的金刚石膜,通过SEM分析掺硼浓度对金刚石膜的形貌影响,并对其机理进行了分析。实验结果显示:随着掺硼浓度的增加,由于硼原子可促进金刚石的形核,使金刚石形核密度增加,导致晶体颗粒向均匀、细小的方向变化;进一步增加掺硼浓度后,由于硼原子促进邻近金刚石颗粒的联结,晶体颗粒又向粗大、尺寸分布不均匀的方向变化。
Boron doped diamond films with high conductivity have found their wide applications in the field of electrical and electrochemistry. To investigate the effects of the boron concentration on the surface morphology,boron doped diamond films are prepared on silicon substrates by hot filament chemical vapor deposition. The surface morphology is analyzed by SEM to study the effects of boron concentration on polycrystalline diamond films. Results show that an appropriate amount of boron doped is good for nucleation and growth of diamond films,since the grains are finer with the crystal shape integrated. However,a heavy amount of boron doped shows an opposite trend,the B atom will enhance the coupling of the adjacent grains; with further increase of the boron concentration,the diamond grain size tends to become coarse and uneven.
出处
《金刚石与磨料磨具工程》
CAS
2013年第4期10-13,18,共5页
Diamond & Abrasives Engineering
基金
中国工程物理研究院院重大基金:"金刚石SAW滤波器的基础问题研究"(2010A0302013)
关键词
金刚石膜
掺硼
形貌
diamond film
boron doped
morphology
