摘要
利用南京电子器件研究所的MOCVD设备在半绝缘4H-SiC衬底外延生长了Al GaN/GaN异质结,运用该材料研制了8GHz输出功率密度10.52W/mm的HEMT器件。非接触霍尔测试表明,经过优化的Al GaN/GaN异质结材料中的二维电子气(2DEG)面密度为1.0×1013cm-2,迁移率达1880cm2/V.s。在该材料上研制了栅长0.35μm带场板的Al GaN/GaNHEMT,小信号测试表明器件fT为31.6GHz,最高振荡频率fmax为36.8GHz。研制的1mm栅宽器件8GHz、45V工作电压下饱和输出功率为10.52W,功率增益和功率附加效率分别为7.62dB和45.8%。
AlGaN/GaN hetreostructure was grown on semi-insulated 4H-SiC substrate by MOCVD in Nanjing Electron Devices Institute and the HEMT with saturated power density of 10.52 W/mm at 8 GHz was developed.Two-demensional electron gas(2DEG)density of 1.0×1013 cm-2 and mobility of 1 880 cm2/V·s for the optimized AlGaN/GaN heterostructure were measured by contactless Hall measurements.0.35 μm gate length AlGaN/GaN HEMTs with field plates were fabricated on the grown heterostructure.A current gain cut-off frequency of 31.6 GHz and a maximum oscillation frequency of 36.8 GHz were obtained through small signal measurements.The developed 1 mm gate width device reaches a saturation output power of 10.52 W at 8 GHz and 45 V operation voltage with a power gain of 7.62 dB and a power added efficiency of 45.8%.
出处
《半导体技术》
CAS
CSCD
北大核心
2008年第S1期80-82,90,共4页
Semiconductor Technology
