摘要
低频噪声可用来测量LED器件的噪声功率谱,从而能够对器件结构中的缺陷态进行深层次的检测和分析。这种检测具有对器件无损伤、快速测量的优点,又反映了器件结构本身的内部特性,具有良好的应用前景。系统介绍了低频噪声的产生机理及数学模型,并全面分析基于GaN和基于GaAs的LED器件的1/f噪声和GR噪声的功率谱表征的研究成果。从低频噪声表征可以观察到,LED的工作性能完全可以通过1/f和G-R噪声功率谱来分析检测。影响LED器件寿命的主要原因在于有源区内的暗斑以及有源区内外的缺陷态。暗斑和缺陷态的影响衰减的机理还未得到确定解释。
Low-frequency noise can be used to measure the noise power spectrum of the LED device,Which can allow to test and analyze the defect states of the device structure in depth.This test has a good prospect,which not only has the advantages of no damage to the device and rapid measurement,but also reflects the internal characteristics of the device structure itself.This paper systematically describes the low-frequency noise generation mechanism and the mathematical model,and introduces comprehensively the research results of the 1/f and GR noise power spectral characterization based on GaN and GaAs LED devices.From the low-frequency noise characteristics of LED it can be observed that LED's performance can be tested and analyzed by 1/f and G-R noise power spectrum.And the origin affecting the life of the LED device is mainly due to dark spots in active region and defect states inside and outside the active region.The mechanism that dark spots and defect states impact the decay of LED has not yet been determined.
出处
《电工技术学报》
EI
CSCD
北大核心
2013年第S2期239-242,共4页
Transactions of China Electrotechnical Society
关键词
LED
低频
1/f
G-R
Serniconductor technology,LED,low frequency,1/f,G-R
