摘要
报道了用分子模板法制备纳米有序多孔SiO2 薄膜。用扫描电子显微镜 (SEM)观察改性前后薄膜的表面形貌 ,发现改性后薄膜孔洞大小均匀 ,排列有序 ,孔径在 2 0 0nm左右。付立叶红外变换光谱 (FTIR)研究表明 ,改性后薄膜内存在大量的 -CH3键 ,增强了薄膜的憎水性 ,可以有效抑制孔洞塌缩。用椭圆偏振光测试仪测量并计算了薄膜的介电常数和膜厚 ,并且研究了热处理温度对二者的影响 ,发现当热处理温度为3 5 0℃时薄膜厚度约为 40 0nm ,此时介电常数有最低值 1.
Nanoporous SiO_2 thin film was synthesized by molecular template method. The surface morphology before and after modification was observed from scanning electron microscope (SEM), and the pore size is about 200 nm and high-ordered. It is found that the -CH_3 substitutes for -OH in species, which can increase the hydrophobicity and avoid the destruction of network. Surface modification was identified by Fourier Transform infrared spectroscope (FTIR). The ellipsometry was used to determine the dielectric constant and thickness of thin film, and the effect of annealing was investigated. It is found that the lowest dielectric constant 1.66 with the thickness of 400 nm at 350 ℃ can be obtained.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2004年第3期462-465,共4页
Chinese Journal of Rare Metals
基金
国家自然科学基金 ( 5 0 2 72 0 2 7)资助项目
关键词
SIO2
低介电常数
分子模板
silica
low dielectric constant
molecular template
