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半导体金属互连集成技术的进展与趋势 被引量：12

Review of Semiconductor Metal-interconnect Integration Technology
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摘要 集成电路 (IC)技术的快速发展对金属互连技术提出了更高的要求。传统的Al金属互连技术已经不能满足现代互连技术发展的需要 ,大马士革结构的Cu金属互连技术已成为互连技术的重点发展方向之一。本文重点介绍了目前Cu互连技术及其面临的关键问题 ,同时还介绍了近期出现的新型Ag互连技术 。 The rapid development of IC technology has led to a search for the new interconnect technology.The traditional Al metallization could not meet the requirements for the development of interconnect technology.Developing damascene Cu metallization has become the main trend recently for the interconnect technology.This paper reviews the important features and problems of the damascene Cu metallization technology.It also introduces the new emerged Ag metallization technology.Finally,the future trends of the potential interconnect technologies are prospected.
作者 黄浩 魏喆良 唐电
机构地区 福州大学材料研究所
出处 《金属热处理》 CAS CSCD 北大核心 2004年第8期26-31,共6页 Heat Treatment of Metals
基金 福建省国际合作重点科研项目 (No 2 0 0 2 0 11)
关键词 集成电路 金属互连 巨大规模 integrated circuits metal-interconnect ULSI
分类号 TN405.97 [电子电信—微电子学与固体电子学]
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参考文献33

  • 1Sai-Halasz G A.Performance trends in high processors [J].Proceedings of the IEEE,1995,83 (1):20.
  • 2Kudo H,Yoshie K,Yamaguchi S,et al.Copper dual Damascene interconnects with very low-k dielectrics targeting for 130nm node [C].In:Proceedings of International Interconnect Technology Conference (IITC2000),2000:267.
  • 3Robert D Mikkola,Qing-Tang Jiang,Ronald Carpio,Brad Carpenter.Both Additive and Current Density Effects on Copper Electroplating Fill of Cu Damascene Structure [J].Materials Research Society,1999,564:399-405.
  • 4Murarka S P.Advanced materials for future interconnections of the future need and strategy [J].Micro-electronic Engineering,1997,(37/38):29-37.
  • 5Gross M E,Dress R,Lingk C,Brown W L,Evans-lutterodt K,Barr D,Golovin D,Ritidorf T,Turner J,Graham L.Electroplated Damascene Copper:Process Influences on Re- crystalliiation and Texture [J].Materials Research Society,1999,564:379-386.
  • 6Lakshminaryanan S,et al.Dual-Damascene copper metallization process using chemical mechanical polishing [C].Proceedings of the 11th International VLSI Multilevel Intercon-nection Conference (IEEE,New York,1994):49-55.
  • 7Ikeda M,et al.Integration of organic low-k material with Cu Damascene employing novel process [C].In:Proceedings of International Interconnect Technology Conference(II TC98),1998:131.
  • 8Ed Korczynski.Cu,low-k dielectrics top MRS meeting agenda[J].Solid State Technology,1998,41 (7):66.
  • 9Ed Korczynski.Interconnect:the new frontier [J].Solid State Technology,1998,41(3):49.
  • 10Ed Korczynski.Low-k dielectric costs for dual-damascene integration [J].Solid State Technology,1998,42 (5):43.

二级参考文献16

  • 1[1]Semiconductor Industrials Association (SIA) Roadmap (1997).
  • 2[2]International Technology Roadmap for Semiconduc tor (ITPS) Interconnect 2001 Edition.
  • 3Chang K M，IEEE Electron Device Lett，1999年，20卷，4期，185页
  • 4Batchalder T，Solid State Technology，1999年，29页
  • 5Qin S，IEEE Electron Device Letters，1998年，19卷，11期，420页
  • 6Lin X W，Solid State Technology，1998年，41卷，10期，63页
  • 7Yu Y,et al.Dielectric property and microstructure of a porous polymer material with ultralow dielectric constant[].Applied Physics Letters.1999
  • 8Plant D V,Kirk A G.Optical interconnects at the chip and board level : challenges and solutions[].Proceedings of Tricomm.2000
  • 9Davis J A,Venkatesan R,Kaloyeros A,et al.Interconnect limits on gigascale integration (GSI ) in the 21st century[].Proceedings of Tricomm.2001
  • 10Wu Z C,et al.Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-k dielectric[].Journal of the Electrochemical Society.1999

共引文献87

同被引文献131

引证文献12

二级引证文献30

金属热处理
2004年 第8期

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