摘要
运用Si/Ti/Au/Au/Ti/Si在N2保护下及420℃左右,成功地实现了Au/Si共熔键合,成品率达到90%以上。该键合方法能进行选择区域键合,完全避免了由于Si/Si熔融键合过程中高温退火给微电子机械系统(MEMS)器件带来的畸变甚至失效,为新型室温红外探测器的研制奠定了良好的工艺基础,是此类结构MEMS器件的理想键合封装方法。
A novel Si/Ti/Au/Au/Ti/Si bonding method based on Au/Si eutectic bonding in nitrogen atmosphere was presented. The bonding temperature is 420°C or so and the successful probability is 90% above. This method could process selective area bonding and wholly overcome the defects in micro-electronic machine system (MEMS) devices during bonding using fusion bonding method before. Using this novel bonding method, a novel uncooled infrared detector was fabricated.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2004年第7期839-841,共3页
Journal of Optoelectronics·Laser
基金
北京市教委基金资助项目(KM200310005009)
