摘要
以氯化铟和氯化锡为前驱物,采用溶胶 凝胶法在玻璃基片上制备了ITO薄膜。研究了掺锡浓度、热处理温度和热处理时间等工艺条件对ITO薄膜光电特性的影响。制备的ITO薄膜的方阻为300Ω/□,可见光平均透过率为80%,电阻率为4×10-3Ω·cm,其光电特性已达到了TN LCD透明电极的要求。
The Sn-doped In_2O_3 thin films were prepared on the glass substrates by sol-gel method with InCl_3·4H_2O and SnCl_4·5H_2O. The studies were carried out on optical and electrical properties of ITO films affected by parameters,such as Sn doping content,annealing temperature and annealing time.The sheet resistance of the ITO films is properly 300 Ω/□,the average visible transmittance is about 80 %,the resistivity is about 4.08×10^(-3) Ω·cm,the optical and electrical properties of the ITO films have met the requirements of the transparent electrode used in TN-LCD.
出处
《液晶与显示》
CAS
CSCD
2004年第5期376-379,共4页
Chinese Journal of Liquid Crystals and Displays
基金
陕西省教育厅基金资助项目(No.03JK161)
