摘要
测试了MESFET工艺条件下制作的霍尔片的基本性能。对设计出的GaAs集成霍尔元件进行了不等位电势的测试,采用霍尔元件并联和自旋电流的方法对GaAs方形霍尔元件的不等位电势进行了静态和动态调制消除。实验结果表明GaAs霍尔元件的不等位电势引起的偏差可以控制在可以忽略的范围内。
The performance of a cross -shaped Hall plate fabricated by the GaAs MESF ET processing was tested.The voltage offsets of a s quare Hall plate was tested,the para llel Hall plates and continuous spinning current method was used to g et static and dynamic quadrature off set cancellation for the Hall sensor.The experiment proves that t he voltage offsets can be controlled and reduced into an ignorable range.
出处
《功能材料与器件学报》
CAS
CSCD
2004年第4期455-458,共4页
Journal of Functional Materials and Devices
基金
上海汽车工业发展基金会项目
