摘要
入射光脉冲波长为1064nm时,GaAs光导开关上的直流电场强度为103V/cm.讨论了恒定光强和高斯光强时,GaAs杂质吸收载流子浓度随时间变化;将高斯光强时的模拟结果同实验相比较,二者吻合很好.
When GaAs photoconductive switch is biased at 103V/cm and illuminated by incident impulse at 1064nm, toconductive current is observed. The phenomenon is explained by impurity absorption theory. With the theory, toconductive carrier density depending on time is simulated when the GaAs photoconductive switch is illuminated constant optical intensity and Gaussian-shaped optical intensity. With comparison, the theoretical result is well eeing with the experimental result.
出处
《激光与光电子学进展》
CSCD
北大核心
2005年第2期30-32,共3页
Laser & Optoelectronics Progress
基金
预研基金(51407030303DZ0206)
电子科大青年基金(JX03019)资助课题
