摘要
MgxZn1 xO薄膜是一种新型宽禁带半导体薄膜,在兼顾ZnO、MgO材料性能的同时,具有带隙连续可调的特点,近年来逐渐成为半导体光电功能材料与器件的研究热点之一。本文从MgxZn1 xO薄膜的基本特性、制备方法、应用研究等方面进行了分析和评述,并对其应用前景进行了展望。
As a novel ternary compound semiconductor, MgxZn1-xO thin films have a unique characteristic of tunable band gap energy which can be continuously adjusted from 3.3 eV to 7.8 eV with increasing x. Such a wide flexibility induced a variety of applications such as heterojunctions, multiquantum wells, ultraviolet photodetectors, window materials for solar cells, et al. The fabrication techniques, structural and optoelectronic properties and potential applications of MgxZn1-xO thin films are summarized in this paper. The development prospects were also discussed.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2005年第2期177-180,共4页
Journal of Functional Materials
基金
国家自然科学基金资助项目(60244003)
关键词
MgxZn1-xO薄膜
宽禁带
半导体
发展前景
Film preparation
Heterojunctions
Magnesia
Magnetron sputtering
Metallorganic chemical vapor deposition
Pulsed laser deposition
Ultraviolet detectors
Zinc oxide
