摘要
探讨了高性能ZnO薄膜的制备工艺,利用X射线衍射(XRD)、原子力显微镜(AFM)和高阻仪对各种条件下制备的薄膜进行了表征分析。研究表明:在一定温度范围内随退火温度上升薄膜C轴取向性更优;同时O空位的填充、自由Zn原子的氧化使得薄膜电阻率提高至107Ω·cm数量级;600℃为最佳退火处理温度,600℃退火处理的ZnO薄膜粗糙度小(RMS为2.486nm),且晶粒均匀致密,表面平整,是适于制备声表面波(SAW)器件的高C轴取向、高电阻率及较平坦的ZnO薄膜。
The high quality ZnO thin films were deposited on silicon substrates by RF magnetron sputtering using zinc oxide target and the deposition conditions were optimized. The microstructure, morphology and electricity property of ZnO films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and high resistance instrument. Results of XRD show that the degree of C-orientation becomes higher with annealing temperature from 500 to 800°C, and its resistivity is raised to 107 Ω·cm because of oxidizing the free zinc atom and filling the oxygen vacancy. When the overall performance of ZnO including C-orientation, resistivity and surface are taken into account, the optimal annealing temperature is about 600 °C. After annealing at 600°C the ZnO films with small surface roughness (about RMS 2.486 nm), high C-orientation and high resistivity are provided, which is well used as piezoelectric films for surface acoustic wave (SAW) devices.
出处
《光电子．激光》
EI
CAS
CSCD
北大核心
2005年第1期28-31,共4页
Journal of Optoelectronics·Laser
基金
国家自然科学基金重点资助项目(60276001)
天津市自然科学基金资助项目(023601711)
关键词
ZNO薄膜
SAW器件
C轴取向
薄膜电阻
声表面波(SAW)
性能分析
原子力显微镜(AFM)
平坦
上升
空位
Acoustic surface wave devices
Annealing
Atomic force microscopy
Crystal orientation
Electric conductivity of solids
Magnetron sputtering
Piezoelectric materials
Semiconducting films
Surface roughness
Thin films
X ray diffraction analysis
