摘要
本文介绍了一种新型高速调制半导体激光器的设计思想、理论依据及实验结果。在掩埋新月型激光器的基础上,对如何增加其调制带宽进行了深入研究。探讨了影响激光器调制带宽的主要因素,综合分析了减小器件分布电容和增加输出功率之间的矛盾和解决的方法,据此设计并研制出高速调制1.3μm InGaAsP/InP多层限制掩埋新月型激光器,器件的3dB调制带宽大于3GHz。
The design idea, theory and experiment results of a new semiconductor laser for high frequency modulation are reported. A detailed research was made to increase laser' s modulationbandwidth based on buried crescent (BC) laser structure.The main problems which affect thebandwidth of BC lasers are found and discussed. The new kind of high speed laser structure,InGaAsP/InP multi-blocking-layer buried crescent laser, was designed and fabricated in ourlaboratory for high output power and low parasitic capacitance.A high 3-dB modulation bandwidth,more than 3-GHz was obtained.
