摘要
本文是继用ＭｏｎｔｅＣａｒｌｏ法模拟ＧａＡｓ亚微米器件后，进一步用该法模拟Ｓｉ亚微米ＭＥＳＦＥＴ。文中除了处理Ｓｉ和ＧａＡｓ散射机制不同外，在模拟方法上有重要进步：用ＦＦＴ（ＦａｓｔＦｏｕｒｉｅｒＴｒａｎｓｆｏｒｍａｔｉｏｎ）代替迭代法，加速解Ｐｏｉｓｓｏｎ方程过程；用快速自散射代替常规自散射，压缩计算无用自散射时间。这些进步相当程度地克服ＭｏｎｔｅＣａｒｌｏ微粒模拟法费机时的固有缺点。模拟得到的形象且合理的结果，给出亚微米栅长时ＳｉＭＥＳＦＥＴ的性能。
Following the work of the simulation for GaAs submicron device with Monte Carlo particle method,this paper uses the same way to simulate silicon submicron MESFET.In addition to deal with different scattering mechanisms in silicon,advanced concepts and methods,such as FFT(Fast Fouier Transfomation) and fast self-scattering,have been used.It to some extent overcomes the disadvantage of Monte Carlo method.Much computer time has been saved.The results of the simulation demonstrate the performance of silicon MESFET.
出处
《电子学报》
EI
CAS
CSCD
北大核心
1994年第2期1-7,共7页
Acta Electronica Sinica
基金
国家自然科学基金
关键词
亚微米器件
蒙特卡罗法
MESFET
Devices modelling,Monte Carlo method,Si submicron devices
