摘要
优良的Ｍ－Ｓ欧姆接触，对于用Ⅲ～Ⅳ族元素化合物制造光电子器件，微波振荡器及微波电路的参数和稳定度是重要的，本工艺实验采用在真空系统中进行共晶的Ａｎ－Ｇｅ合金，利用ＡｕＧｅＮｉ合金组分实现在ｎ－ＧａＡｓ衬底上的欧姆接触．并结合资料，对完成的ＡｕＧｅＮｉ／ｎ－ＧａＡｓ的低欧姆接触机理进行了分析．
The well connection of M-S ohm is the key for making the photoelectrondevice with Ⅲ～Ⅳ compounds,microwave vibratior as well as t he parameter and the stabilityof the microwave circuit.The experiment goes on in a vaccum system to form an alloy crystaLlized with An-Ge,thus accomplshing ohm's connection on the basis of n--GaAs liner.With thedata available,an analysis to the mechanism of low ohm's connection of An GeNi/n--GaAs isgiven.
