摘要
本文叙述了在反应离子刻蚀（ＲｅａｃｔｉｖｅＩｏｎＥｔｃｈｉｎｇ）系统中采用无碳含氟原子刻蚀气体（ＳＦ＿６，ＮＦ＿３）对硅的深槽刻蚀；分析了真空压力、射频功率、气体组合及其流量和电极温度对刻蚀速率、刻蚀剖面的影响；并根据实验结果，绘出了刻蚀速率与以上物理变量的函数关系曲线；得到刻蚀速率０．５～０．７μｍ／ｍｉｎ，糟宽≤５．０μｍ，深度大于６．０μｍ，横向腐蚀小于１．５μｍ的各向异性刻蚀剖面。本研究技术将应用于超高速ＥＣＬ分频器电路，双极高可靠抗辐射加固稳压器件和ＢｉＣＭＯＳ模拟电路的实际制作中。
Trench formation of silicon in reactive ion etchlng system using SF_6 and NF_3 is de-scribed in the paper. The dependence of etching rate and profile on the vacuum pressure,RF pow-er,gas composition and flow rate,and electrode temperature is analyzed.Etching rate is plotted as a function of the above variables based on our experimental results. An etching rate of 0.5～0.7μm/min has been obtained.The etched profile is anisotropical,with a trench width greater or equal to 5.0μm,depth above 6.0μm and lateral etching less than 1.5μm.
出处
《微电子学》
CAS
CSCD
1994年第4期36-40,共5页
Microelectronics
关键词
深槽隔离
反应离子刻蚀
硅
Trench isolation,Anisotropic etching,Etching profile,RIE
