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纳米非晶Si_3N_4粉的晶化及粒子长大行为研究 被引量:8

The Crystallization and Particulate Growth Behaviour of Nanometric Amorphous Si_3N_4 Powders
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摘要 本文对激光气相合成的非晶纳米Si3N4粉在1200~1700℃进行热处理,用TEM、XRD及BET对粉的结晶转变及粒子生长过程进行了表征.实验发现,粉体从1250℃开始晶化,有少量的β-Si3N4形成,到1300℃有α-Si3N4形成,在晶化初期非晶粒子靠表面扩散发生硬团聚.在1400~1600℃晶化加速,α相急增,此阶段粒子快速生长,在1700℃粉体发生碳化,与炉中CO反应形成部分β-SiC,同时,发生Si3N4的α-β转变. The laser-synthesized nanometric amorphous St3N4 powders were annealed between 1200 and 1700 ℃, and the crystallization and particulate growth process were characterized by TEM, XRD and BET techniques. It was fo find that the crystallization happened at 1250℃ and a small amount of β-Si3N4 formed at 1250 ℃. a-St3N4 appeared at 1300 ℃.In the initial stage of the crystallization,the amorphous St3N4 particles formed hard agglomerates by the interparticle surfactal diffusion. The crystallization proceeded rapidly between 1400 ̄1600℃ during which or-St3N4 increased steeply and the particles grew rapidly. The liquid sintering of the particles happened at 1600℃ which was due to the formation of liquid SiO2 provided by the native amorphous SiO2 on the particles of the powders. It was found that there was some β-SiC formed at 1700℃ due to the reaction of St3N4 and CO gas, and the transformation of α-St3N4 to β-St3N. also happened at 1700℃.
出处 《无机材料学报》 SCIE EI CAS CSCD 北大核心 1994年第3期293-297,共5页 Journal of Inorganic Materials
关键词 纳米非晶粒 氮化硅 晶体 粒子生长 nanometric amorphous powders, Si_3N_4, crystallization, particulate growth
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  • 1梁勇,材料研究学报,1990年,4卷,2期,179页

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