摘要
采用等离子体化学气相沉积方法在镀Al玻璃及单晶Si衬底上制备了氢化非晶硅 (a Si:H)薄膜 ,研究了样品在不同的热处理过程中Al对其晶化过程的影响。X射线衍射测量发现 ,由于Al的存在使a Si:H的晶化温度大幅度降低 ,并得到了有强烈 (111)结晶取向的多晶Si薄膜。X射线光电子能谱分析表明 ,热处理过程中Al向Si薄膜表面的扩散降低了Si的成核温度。
Hydrogenated amorphous silicon (α-Si:H) thin films were deposited on Al-coated glass and Si substrates by plasma-enhanced CVD with SiH4, Ar, and H2 mixtures as a source gas. Influence of Al on the crystallization of α-Si:H was studied during the annealing. The structure of the films was characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (ATM). The results show that polycrystalline Si films with a highly ordered structure and a strong orientation were obtained, and the Al layer significantly decreases the crystallization temperature of α-Si:H films due to the diffusion of Al atoms through the Si film.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2005年第1期57-60,共4页
Chinese Journal of Vacuum Science and Technology
基金
国家自然科学基金 (No .10 175 0 3 0 )
关键词
A-SI:H薄膜
SI衬底
非晶硅
幅度
等离子体化学气相沉积
晶化
单晶
结晶取向
热处理过程
成核
Aluminum
Amorphous films
Amorphous silicon
Annealing
Atomic force microscopy
Crystal orientation
Crystallization
Plasma enhanced chemical vapor deposition
X ray diffraction analysis
X ray photoelectron spectroscopy
