摘要
射频磁控溅射法室温下在Pt Ti SiO2 Si上制备非晶Pb(Zr0 4 8Ti0 52 )O3薄膜 ,非晶PZT薄膜分别经常规炉退火(CFA)处理和快速热退火 (RTA)处理晶化为 (10 0 ) ,(111)不同择优取向的多晶薄膜 .采用x射线衍射测定了薄膜相组分、择优取向度 ;用原子力显微镜和压电响应力显微镜观察了薄膜表面形貌 ,以及对应区域由自发极化形成的铁电畴像 ,观察了不同取向薄膜的电畴分布特征 .结果表明 ,RTA晶化过程钙钛矿结构PZT结晶主要以PZT Pt界面处的PtPb化合物为成核点异质形核并类似外延的结晶生长 ,沿界面结晶速率远大于垂直膜面结晶速率 ,而CFA晶化样品成核发生在膜内杂质缺陷处 ,以同质成核为主 .不同的成核机理导致了不同晶面择优取向生长 .
Pb(Zr0.48Ti0.52)O-3 (PZT) thin films were prepared on the Pt/Ti/SiO2/Si substrates by RF- magnetron sputtenng method at room temperature. After rapid thermal annealing (RTA) and conventional furnace annealing (CFA) at different temperatures, the amorphous films were transformed into polycrystalline PZT thin films with ( 100) and (111) orientation, respectively. The phase formation and degree of orientation were investigated by x-ray diffraction (XRD). The surface micro-structure and ferroelectric domains formed by the spontaneous polarization in the corresponding region were observed by atom force microscopy and piezoresponse force microscopy. The distribution character of the ferroelectric domains with different preferred orientation in the films were studied. The result shows the perovskite PZT crystalline was found to hetero-nucleate epitaxially on top of the PtPb intermetallic phase at the PZT/Pt interface during RTA. The crystallizing speed along the interface is much faster than perpendicular to the film surface. While the nucleation of the films annealed by CFA dominantly homo-nucleate around the defects and impurities in the films. Different preferred orientation growth is attributed to different nucleation mechanism.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2005年第3期1334-1340,共7页
Acta Physica Sinica
基金
国家重点基础研究发展规划项目 (批准号 :5 13 10Z0 3 )资助的课题 .~~
