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反应磁控溅射沉积Ti_xAl_yN_z热控薄膜研究 被引量:6

DEPOSITION OF Ti_x Al_yN_z THERMAL CONTROL THIN FILMS BY MAGNETRON REACTIVE SPUTTERING
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摘要 采用反应磁控溅射技术,以Ti和Al为溅射靶材料,Ar和N2为溅射气体,在Al基底上沉积TixAlyNz热控薄膜。优化制备薄膜的最佳实验条件。对薄膜进行XRD、XPS分析及热光学测试,研究了TixAlyNz薄膜的结构特点及热光学特性。结果表明,采用独立Ti、Al靶的磁控反应溅射制备的TixAlyNz热控薄膜,通过控制薄膜厚度与组成,在忽略飞行器内部热作用的条件下其平衡温度为34℃。 Ti x Al y N z thermal control thin films were deposited on Al substrate by reactive mag netron sputtering tech-nique,with Ti and Al as targets.Ar an d N 2 were used as sputtering gases.The effect of each factor on the structure o f Ti x Al y N z thin films was investigated to obtain the optimum conditions for deposition.X -ray diffraction(XRD),X -ray photoelectron spectroscopy(XPS)have been used for characterizing th e deposited films.Thermal and optic al test was processed for the thin films,which validated the thermal c ontrol characterization forTi x Al y N z thin films.The research show that Ti x Al y N z thermal control thin films can be deposited b y reactive magnetron sputtering technique with independent Ti 、Al targets by controlling thickness and composition of films.Neglecting internal heat contribut ions,equilibrium temperature of 34℃was obtained.
机构地区 兰州物理研究所
出处 《真空与低温》 2005年第1期34-39,共6页 Vacuum and Cryogenics
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参考文献8

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同被引文献56

  • 1杨世伟,李绍海,常铁军,王君.电弧离子镀(Ti,Al)N涂层高温氧化形貌分析[J].哈尔滨工程大学学报,2004,25(3):314-317. 被引量:4
  • 2陈淑花,潘应君,陈大凯.TiAlN膜层的研究进展[J].工具技术,2004,38(10):6-10. 被引量:19
  • 3刘杨.TiN、TiNC和TiC薄膜的制备及其性能研究[J].天津商学院学报,2005,25(3):17-19. 被引量:4
  • 4闫梁臣,熊小涛,杨会生,高克玮,王燕斌.磁控双靶反应共溅射(Ti,Al)N薄膜的研究[J].真空科学与技术学报,2005,25(3):233-237. 被引量:11
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