摘要
采用多种传输线模型方法,测量了p型GaN上的欧姆接触的比接触电阻率.通过比较和分析不同测量方法所得的结果之间的差异,得出了一个准确、可靠测量p型GaN上的欧姆接触的比接触电阻率的方法———圆点传输线模型方法.利用该方法优化了p型GaN上欧姆接触的退火温度,在氧气气氛中650℃退火后获得了最优的欧姆接触,其比接触电阻率为5 12×10-4Ω·cm2.
Three transmission line model methods are adopted to measure the specific contact resistivity(SCR) of the ohmic contacts on p-GaN.By comparing and analyzing the results of these experiments,it is concluded that the dot circular transmission line model (dot-CTLM) is the most suitable method to measure the SCR of the ohmic contact on p-GaN.Based on the dot-CTLM,the annealing temperature of ohmic contact on p-GaN is optimized,and the best result with SCR of 5.12×10 -4 Ω·cm2 is achieved after annealing at 650℃ in O 2 atmosphere.
基金
国家重点基础研究发展规划(批准号:TG2000036601)
国家高技术研究发展计划(批准号:2001AA312190
2002AA31119Z)
国家自然科学基金(批准号:60244001)资助项目~~
