摘要
报道了用15wt%H2 SO4 为电解液,在恒温0℃,4 0V电压条件下制备阳极氧化铝膜,用原子力显微镜观察其形貌,表明在简单条件下在石英衬底上制备了致密的氧化铝微晶膜。研究了不同电压条件下制备的氧化铝膜的常温光致发光,并监测了其激发光谱,发现其常温光致发光相对强度和发射峰位置与阳极氧化电压关系密切,有相对强度变小和发射峰位置红移的趋势,在4 0V电压条件下出现了35 6nm新的发射峰,而其不同的发射峰激发光谱都为2 10nm ,说明其来源存在关联。详细分析了4 0V电压下的阳极氧化铝膜中出现的35 6 ,386nm近紫外发射,并认为其发光来源于与F心和F+ 心有关的氧缺陷。
nm thick aluminum films were deposited on SiO_2 substrates by heat evaporat ion. At 0 ℃, 40 V DC voltage, the authors successfully prepared h igh density Al_2O_3 films by anodic oxidation on SiO_2 substrates with 15 wt% H_2SO_4 as electr olyte, and AFM was employed to study the film surface morphology. A t room temperatu re the authors measured the photoluminescence spectrum of Al_2O_3 films prep ared at dif ferent anodic voltages excited by Xe lamp. In addition, the authors monitore d their excit ation spectra of different emission peaks, and the authors found that the relati ve emiss ion intensity gets weaker and shifts to lower energy at higher anodic voltage. At 40 V anodic voltage the authors observed new 356 nm ultraviolet emission, w hich has the same 210 nm excitation emission. Based on the discussion of the relative intensi ty of the PL spectra of anodic alumina at different voltages, the authors sugges t that F and F+ oxygen vacancy defects were responsible for the observed 356 and 38 6 nm ultraviolet photoluminescence from Al_2O_3 anodic film at 40 V voltage.
出处
《光谱学与光谱分析》
SCIE
EI
CAS
CSCD
北大核心
2005年第6期832-835,共4页
Spectroscopy and Spectral Analysis
基金
北京市自然科学基金(4012010)资助项目
