摘要
单晶硅高浓度硼掺杂会导致晶格失配,从而引起一定的残余应力。为了估算残余应力的大小,研究了浓硼掺杂悬臂梁的形变曲线;分析了形变曲线与悬臂梁尺寸的关系,其中,悬臂梁长度对形变曲线无影响,而宽度越小,形变曲线越陡。通过对变形曲线的拟合,把形变曲线等效成为弯曲外力偶矩下的形变,从而估算出等效的残余应力大小,约为1×107Pa。
Some imparity of crystal lattice can exist because of the heavy doping of silicon,so it can cause residual stress.To direct this problem,the strain caused by heavy doping is analysed by means of research in deflection curve of heavily boron-doped monocrystalline silicon cantilever.The relationship between deflection curve and dimensions of cantilevers has been studied,the length doesn't affect the curve,but the width does,the smaller is the width,the steeper is the curve.Suppose the deflection is caused by bending moment,and the curve is simulated.The residual stress is about 1×107Pa.
出处
《传感器技术》
CSCD
北大核心
2005年第7期47-48,51,共3页
Journal of Transducer Technology
基金
国防预研基金资助项目(2002-4210503-5-03)
关键词
单晶硅
悬臂梁
浓硼扩散
残余应力
monocrystalline silicon
cantilever
heavily boron diffusion
residual stress
