摘要
对于硅ＮＰＮ晶体管中新型的收集区局部掺杂结构以及常规的收集区均匀掺杂结构，本义采用数值分析，计算出这两种结构的晶体管内部的电势及电场的：二维分布．结果表明：在常规结构中，其浓硼扩散结的弯曲边缘处存在着电场集中效应，收集极雪崩出穿电压ＢＶｃｂｏ深受这种效应的影响．而在新型结构中，上述电场集中效应不复存在，其收集极雪崩击穿电压ＢＶｃｂｏ获得了明显的改善．
Abstract For the novel St NPN transistors with locally doped collector and the normal transistors with uniformly doped collector,using numerical analysis,the two-dimensional distributions of the electric potential and electric field in these two kinds transistors are presented.The results suggest:in the normal silicon NPN transistors,there is an electric field concentrating effect in the curved edge of the dense boron diffusion junction. Its avalanche breakdown voltage BVcbo is seriously affected by this effect,while in the novel transistors,the electric field concentrating effect vanishes,so its avalanche BVcbo has been obviously improved.
