摘要
以六甲基二硅氧烷(HMDSO)为单体,采用DBD等离子体枪在大气环境下进行聚合物合成,对2种不同进样方式的放电特性、聚合效果作了比较,发现2种进样方式的放电特性相同,唯一不同在于等离子体区下游进样放电等离子体炬长在低流量时先增大后减小,而等离子体区直接进样方式放电炬长直接达到起弧最大值。FTIR显示单体不同的输入方式对聚合膜结构影响不大,但对聚合膜的沉积速度有明显的影响,单体输入到等离子体区下游成膜速度明显快于单体直接进入等离子体区。扫描电子显微镜(SEM)给出了聚合膜的表面形态,表面能测试显示其接触角可达110度,推墨实验表明等离子体下游区进样聚合膜斥墨性好,可做无水胶印板材。
SiOx film polymerized with dielectric barrier discharging (DBD) plasma gun in atmospheric pressure was presented. After comparing the different monomer feeding methods, in discharging zone and downstream, it was found there are negligible variation in discharging properties and film structures, except the later discharging of downstream feeding at low flow mate, but on the deposition rate which is larger in downstream. The polymerization is confirmed by Fourier Transform Infrared Spectroscopy (FTIR) and Scanning Electron Microscopy ( SEM ), which indicated the homogeneous film with reticuloendothelial structure was deposited in downstream feeding method. The contact angle measurement revealed that SiOx film was much hydrophobic, 110 degree in distilled water.
出处
《包装工程》
CAS
CSCD
北大核心
2005年第4期1-3,39,共4页
Packaging Engineering
基金
国家自然科学基金项目资助(10475010)