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硫化压力对电沉积并硫化合成的FeS_2薄膜组织结构的影响 被引量:1

On the pyrite(FeS_2) thin films prepared by sulfurizing the electrodeposited precursive films at different sulfur vapor pressure
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摘要 采用电沉积及400℃不同压力硫化热处理制备了多晶FeS2薄膜,研究了硫化压力对薄膜晶体结构及微观组织的影响.在较低的硫化压力条件下,电沉积得到的Fe3O4先驱体硫化反应不充分,薄膜组织中FeS2与Fe3O4共存.当硫化压力高于20kPa时,Fe3O4先驱体可充分地转变成具有细小晶粒形态的FeS2,薄膜形貌也由多孔疏松演变为均匀平整.硫化压力在5~40kPa范围内变化对FeS2晶粒尺寸影响不明显,但使FeS2晶格常数略有下降. The polycrystalline FeS2 thin films were prepared by thermal sulfurizing the electrodeposited precursive films. The effect of sulfur vapor pressure on the microstructure and crystal characterization of the films were investigated. The sulfurizing reaction of the precursive Fe3O4 prepared by electrodepositing was insufficient and results in the presence of a combined structure of FeS2 and Fe3O4 at low sulfur vapor pressure. The precursive Fe3O4 was completely transformed into the polycrystalline FeS2 thin films by sulfurization annealing at the sulfur vapor pressures higher than 20kPa. The precursive films prepared by electrodepositing show a porous and loose structure. The morphology of the FeS2 films can change from the porous and loose structure into the smooth and compact structure with increasing the sulfur vapor pressure. The crystallite size of the FeS2 films shows an insignificant change with the sulfur vapor pressure but the lattice constant slightly decreases as the sulfur vapor pressure increases from 5 to 40kPa.
出处 《功能材料》 EI CAS CSCD 北大核心 2005年第8期1251-1253,1256,共4页 Journal of Functional Materials
基金 国家自然科学基金资助项目(50071056)
关键词 FeS2 薄膜 硫化处理 组织结构 FeS2 thin films thermal sulfurizing microstructure
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