摘要
本文研究了热灯丝射频等离子体ＣＶＤ法合成的立方氮化硼薄膜（ｃ－ＢＮ），反应气体是８＿２Ｈ＿６和ＮＨ＿３，衬底材料为Ｓｉ单晶。通过扫描电镜、红外吸收谱和Ｘ射线衍射分析指出，生长出的ｃ－ＢＮ簿膜的质量很好。实验结果表明，ｃ－ＢＮ膜的电子结构和光学性质与沉积条件密切有关。文中对膜的生长机构也进行了讨论。
The cubic boron nitride films have been synthesized by hot filament assisted RF plasma chemical vapor deposition(CVD)from the reactive gases of B_2H_6 and NH_3 on silicon substrate.The films obtained are of good quality that are characterized by scannig electron microscopy,Infrared obsorption and X-ray diffraction.Experimental results show that the electronic structure and optical properties of cubic boron nitride films closely depend on the growth conditions of the films,The growth mechanism of the films also is discussed.
出处
《人工晶体学报》
EI
CAS
CSCD
1995年第4期341-346,共6页
Journal of Synthetic Crystals
基金
国家自然科学基金
关键词
立方氮化硼薄膜
汽相沉积
薄膜
c-BN films
CVD spectra
growth mechanism
superhard materials
