摘要
本文对短沟道MOSFET沟道区的硼、砷离子注入分布采用二次函数及指数函数的分段函数分布近似,并利用格林函数法求解二维泊松方程,从而导出非均匀分布短沟道MOS FET的表面势和阈值电压的解析模型.它计及注入能量、剂量、退火温度、退火时间等工艺参数的影响,也包含了漏极电压V_D和栅氧化层厚度等因素的影响.本解析模型的结果与用MINI-MOS数值模拟的结果符合得很好,具有简单、实用的特点.适用于改进有关电路分析程序例如SPICE中的模型.
The segmental approximation of quadratic function and exponential function are used fordescribing the distribution of boron and arsenic ion implantation in short channel MOS FET.By using Green's function method, the two-dimensional Poisson's Equation is solved.The an-alytical model of surface potential and threshold voltage of short channel MOS FET withnonuniform doping profile are derived.The influence of implantation energy,dose and annea-ling temperature, annealing time on threshold voltage are included in this annalytical model.The influence of drain voltage V_D and thickness of oxidation layer are also included in.Theresults of the analytical model is in good agreement with the results by using MINIMOS nume-rical simulation.It is simple and effective and it can be used for improving the model in suchcircuit analysis programs as in SPICE.
基金
电科院基金
关键词
泊松方程
离子注入
MOSFET
解析解
Poisson's equation
Ion implantation
Analytical solution
Surface potential
Boundary conditions
