摘要
采用氟化钨(WF6)和甲烷(CH4)为前驱体,采用等离子体增强化学气相沉积(PECVD)方法制备具有纳米晶结构的碳化钨薄膜.采用SEM,XRD,EDS等方法表征了碳化钨薄膜的形貌、晶体结构和化学组成.通过表征,表明在前驱体混合气体中的甲烷与氟化钨气体的流量比(碳钨比)为20,基底温度为800 ℃的条件下得到的碳化钨薄膜是由直径为20～35 nm的圆球状纳米晶构成.通过分析影响薄膜的晶体结构、化学组成的因素后,认为要得到具有纳米晶结构的碳化钨薄膜,主要应控制前驱体气体中的碳钨比以及基底温度.
Nanocrystalline tungsten carbide thin films have been deposited by low temperature plasma enhanced chemical vapour deposition from a WF6/CH4/H2/Ar mixture on Aluminum substrates. The phase composition of the deposition films were characterized by X-ray diffraction （XRD）, Scanning electron microscopy （SEM） and energy-dispersive spectrometer （EDS）. The results show that with the precursor CH4/WF6 concentration ratio 20 the tungsten carbide thin film, composed of 20-35 nm diameter sphere nanocrystallines, deposited at temperature 800 ℃. It was also found that the formation of nanocrystalline resulted from the effect of the precursor CH4/ WF6 concentration ratio and deposition temperature.
出处
《浙江工业大学学报》
CAS
2005年第4期368-371,共4页
Journal of Zhejiang University of Technology
基金
国家自然科学基金项目(20276069)
浙江省自然科学基金重大资助项目(ZD0024)
