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开关线型四位数字MEMS移相器 被引量:2

A 4-bit Switched-line Digital MEMS Phase Shifter
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摘要 介绍了一种基于射频微机械串联开关设计的开关线型四位数字微机电系统(Micro-electromechanical Systems以下简称MEMS)移相器.该移相器集成了16个RF MEMS开关,使用了13组四分之一波长传输线和MIM接地耦合电容,有效地使开关的驱动信号和微波信号隔离,串联容性开关设计有效地降低了开关的启动电压.使用低温表面微机械工艺在360 μm厚的高阻硅衬底上制作移相器,芯片尺寸4.8 mm×7.8 mm.移相器样品在片测试结果表明,频点10.1 GHz,22.5°相移位的相移误差为±0.4°,插损2.8 dB;45°位的相移误差为±1.1°,插损2.0 dB;在X波段,对16个相移态的测试结果表明,移相器的插入损耗小于4.0 dB,驻波比小于2.4,开关驱动电压为17~20 V. A 4-bit digital MEMS phase shifter is presented, which is based on switchedllne design and composed of 16 series RF MEMS switches and 13 groups of the quarterwavelength of microstrip with MIM ground coupling capacitors. With this configuration, the DC driven voltage can be separated from the RF signal effectively and low pull-down voltage of the switches can be achieved. The phase shifter is fabricated on a 360μm-thick silicon substrate by low temperature metal-dielectric surface micromachining process, and the chip size is 4.8 mm × 7.8 mm. Measurements show that the phase error of ±0. 4° corresponds to the phase shift of 22. 5° at 10. 1 GHz where the insertion loss is 2. 8 dB and the phase error of ±1. 1° corresponds to the phase shift of 45° where the insertion loss is 2.0 dB. The insertion loss is less than 4 dB and the VSWR is less than 2.4 for all 16 phase states at X-band and the pull-down voltage is 17-20V.
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2005年第3期344-348,共5页 Research & Progress of SSE
关键词 微机电系统移相器 射频微机电系统开关 开关线 MEMS phase shifter RF MEMS switch swi.tched-line
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参考文献14

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二级参考文献2

  • 1Yao Zjamie,IEEE J Microelectromechan Systems,1999年,8卷,2期,129—134页
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共引文献9

同被引文献28

  • 1吕苗,赵正平,娄建忠,顾洪明,胡小东,李倩.Thermal Effects and RF Power Handling of DC~5GHz MEMS Switch[J].Journal of Semiconductors,2004,25(7):749-755. 被引量:1
  • 2金博识,吴群,贺训军,唐恺,杨国辉,Lee Jong-Chul.一种新型的分布式MEMS移相器的小型化设计[J].传感技术学报,2006,19(05B):1885-1888. 被引量:5
  • 3Rebeiz G M,Muldavin J B.RF MEMS switches andswitch circuits[J].IEEE Microwave Magazine,2001,10(12):59-71.
  • 4Rebeiz G M.RF MEMS理论.设计.技术[M].黄庆安,廖小平,译.南京:东南大学出版社,2005:11-13.
  • 5Pillans B,Eshelman S,Malczewski,et al.Ka-bandRF MEMS phase shifters[J].IEEE Microwave andGuided Wave Lett,1999,9(12):520-522.
  • 6Hacker J B,Mihailovich R E,Kim M,et al.A Ka-band 3-bit RF MEMS true-time-delay network[J].IEEE Transactions on Microwave Theory andTechniques,2003,51(1):305-308.
  • 7Hayden J S,Rebeiz G M.Very low-loss distributedX-band and Ka-band MEMS phase shifters usingmetal-air-metal capacitors[J].IEEE Transactions onMicrowave Theory and Techniques,2003,51(1):309-314.
  • 8Gong S,Shen H,Barker N S.A 60-GHz 2-bitswitched-line phase shifter using sP4T RF-MEMSswitches[J].IEEE Transactions on MicrowaveTheory and Techniques,2011,59(4):894-900.
  • 9郁元卫,贾世星,朱健,陈辰.宽带直接接触式RF MEMS开关[J].传感技术学报,2008,21(4):688-691. 被引量:4
  • 10杜国平,朱健,郁元卫,侯智昊.横向接触式RF MEMS开关[J].固体电子学研究与进展,2010,30(4):518-521. 被引量:1

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