摘要
分析了LDMOS(lateral DMOS)在一次雪崩击穿后的局部电热效应.提出并证明了等温分析和电热分析分别得到的LDMOS的触发点是不同的;分析了局部晶格温度在空间上的分布特点;并提出晶格温度弛豫时间会影响漏极电压弛豫时间.从而证明LDMOS工作于ESD(electrostatic discharge)保护的大电流区时,电热分析比等温分析的模拟结果与实验结果符合得更好.
Local electro-thermal effects of LDMOS after the first avalanche breakdown are analyzed. The different trigger points of LDMOS＇s intrinsic npn transistor by isothermal and non-isothermal methods are compared and analyzed. The space distributing characteristics of lattice temperature are described, and the influence of ttemp （delay time of lattice temperature） on tdrain （delay time of drain voltage） is proposed. Thus, it is shown that the simulation results of the non-isothermal method are more consistent with the experimental data than those of the isothermal method,under ESD stress conditions.
基金
国家自然科学基金资助项目(批准号:60476036)~~
关键词
等温
电热
触发点
ESD
晶格温度
isothermal
non-isothermal
trigger points
ESD
lattice temperature
