摘要
采用红外显微镜、X射线双晶回摆衍射法、X射线貌相术对CdZnTe衬底中的沉淀相、亚结构、组分偏析等缺陷进行了研究,并对用此衬底液相外延的HgCdTe薄膜作了测试。结果显示:CdZnTe衬底中亚晶界处聚集的位错在外延生长中呈发散状向薄膜中延伸,造成了薄膜形成亚晶界和更大面积的由位错引起的晶格畸变应力区域,影响了薄膜结构的完整性。
The characterizations of CdZnTe substrate and HgCdTe epilayer grown by liquid phase epitaxy have been carried out by means of infrared microscope, X-ray double crystal rocking curve method and X-ray topography method of precipitate, substructure and compositional segregation etc. The results show that dislocations gathered at the subgrain boundary in CdZnTe substrate expend to the epilayer HgCdTe in a radiation like way, resulting in the subgrain in epilayer and the larger lattice distortion stress area caused by defects, which affects the structural perfection in HgCdTe thin film.
出处
《激光与红外》
CAS
CSCD
北大核心
2005年第9期663-667,共5页
Laser & Infrared
