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一种电流求和型CMOS基准电流源 被引量：2

Current Summing Mode CMOS Current Reference
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摘要 基于温度补偿的方法设计了一种高性能的CMOS基准电流源电路,该电路采用0．35mm N阱 CMOS工艺实现。通过Cadence Spectre工具仿真,结果表明,在-40-85℃的温度范围内,该电路输出 电流的温度系数小于40×10-6／℃。在3．3V电源电压下功耗约为1mW,属于低温漂、低功耗的基准电流源。 Based on a method of temperature compensation, a novel super performance CMOS current reference circuit is presented. It is realized using the 0.35μm N-well CMOS process. The simulation results for this circuit using Cadence Spectre tools show that the temperature coefficient is less than 40 ×10^-6/℃ in the range -40～85℃. The power consumption is about 1.2mW at 3.3V power supply. So it＇ s a low temperature coefficient and low power consumption current reference.
作者 李炜 蔡敏
机构地区 华南理工大学物理科学与技术学院
出处 《半导体技术》 CAS CSCD 北大核心 2005年第11期60-63,共4页 Semiconductor Technology
关键词 互补金属氧化物半导体 基准电流源 低温漂 低功耗 CMOS current reference temperature coefficient low power consumption
分类号 TN432 [电子电信—微电子学与固体电子学] TN431.1 [电子电信—微电子学与固体电子学]
  • 相关文献

参考文献6

  • 1DEHGHANI R, ATARODI S M. A new low voltage precision CMOS current reference with no external components[J]. IEEE Trans on Circuit and Systems Ⅱ ,2003,50(12): 928-932.
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  • 3陈碧,罗岚,张萌.基于电阻补偿技术的低温漂电流源的设计[J].电子工程师,2004,30(3):10-12. 被引量：6
  • 4毕查德·拉扎维(美) 陈贵灿 程军 张瑞智 译.模拟CMOS集成电路设计[M].西安交通大学出版社,2003..
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  • 6LEETH.CMOS射频集成电路设计[M].北京:电子工业出版社,2004..

二级参考文献10

  • 1尹韬,朱樟明,杨银堂,郭磊.衬底驱动MOSFET特性分析及超低压运算放大器设计[J].Journal of Semiconductors,2005,26(1):158-162. 被引量：14
  • 2[1]Razavi B. Design of Analog CMOS Integrated Circuits. Boston(MA): McGraw-Hill, 2001
  • 3[2]Chen Jiwei, Shi Bingxue. 1 V CMOS Current Reference with 50 ppm/℃ Temperature Coefficient. Electronics Letters, 2003, 39(2): 209～210
  • 4[3]Khan Q A, Wadhwa S K, Misri K. A Low Voltage Switched-Capacitor Current Reference Circuit with Low Dependence on Process, Voltage and Temperature. In: Proceedings 16th International Conference on VLSI Design Concurrently with the 2nd International Conference on Embedded Systems Design. Los Alamitos(CA): IEEE Computer Society, 2003. 504～506
  • 5Chen Jiwei, Shi Bingxue. 1V CMOS Current Reference with 50ppm/℃ Temperature Coefficient[J]. IEE Electronics Letters, 2003, 39(2): 209-210.
  • 6Lee C H, Park H J. All-CMOS Temperature Independent Current Reference[J]. IEE Electronics Letters, 1996, 32(14): 1280-1281.
  • 7Doyle J, Lee Y J, Kim Y B. A CMOS Subbandgap Reference Circuit with 1V Power Supply Voltage[J]. IEEE Journal of Solid-State Circuits, 2004, 39(1): 252-255.
  • 8Dehghani R, Atarodi S M. A New Low Voltage Precision CMOS Current Reference with No External Components[J]. IEEE Trans on Circuits and Systems Ⅱ, 2003, 50(12): 928-932.
  • 9Bernardson P. Precision, Temperature and Supply Independent CMOS Current Source with No External Comonents[J]. IEE Electronics Letters, 2002, 38(25): 125-130.
  • 10朱樟明,杨银堂,罗宏伟,刘帘曦,朱磊.折叠内插式模/数转换器误差补偿技术研究[J].电路与系统学报,2004,9(1):64-67. 被引量：1

共引文献12

同被引文献18

  • 1BONI A.Op-amps and startup circuits for CMOS handgap Solid-State Circuits,2002,37(10):1339.
  • 2VITTOZ E A,NEYROUD 0.A low voltage CMOS bandgap reference[J].IEEE Journal of Solid State Circuits,1979,14(3):573-579.
  • 3毕查德 拉扎维(著) 陈贵灿 程军 张瑞智 (译).模拟CMOS集成电路设计[M].西安:西安交通大学出版社,2003.151-155.
  • 4LAI Xin-quan, XU Zi-you, LI Yah-ruing, et al. A CMOS piecewise curvature-compensated voltage reference[J]. Microelectronics Journal, 2009, 40: 35-45.
  • 5GILBERT B. Translinear circuits: a proposed classification [J]. Electronics Letters, 1975, II(I): 14-16.
  • 6DEHGHANI R, ATARODI S M. A new low voltage precision CMOS current reference with no external components[J]. IEEE Transactions on Analog and Digital Signal Processing, 2003, 50: 928-932.
  • 7ZHOU Hao, ZHANG Bo, LI Zhao-ji, et al. A new CMOS current Reference with high order temperature compensation [C]//Intemational Conference on Communications, Circuits and Systems. Chengdu: IEEE Press, 2006.
  • 8RINCON-MORA G; ALLEN P E. A 1.1 and piecewise-linear V current- mode bandgap reference [J]. IEEE Journal of Solid-State Circuits, 1998, 33(10) 1551- 1554.
  • 9FALCONI C, D'AMICO A, DI NATALE C, et al. Low cost Curvature correction of bandgap references for integrated sensors[J]. Sensors and Ctuators, 2007, 117(1): 127-136.
  • 10LI Yan-ming, LAI Xin-quan, JIA Xin-zhang. A novel temperature stable CMOS current reference[C]//ICSICT '06, 8th International Conference on Solid-State and Integrated Circuit Technology. Shanghai: [s.n.], 2006, 1772-1775.

引证文献2

二级引证文献10

半导体技术
2005年 第11期

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