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激光对面阵CCD器件破坏的一种新机理 被引量:26

New analysis on laser-induced damage mechanism of array CCD device
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摘要 用波长为1 064 nm、脉宽为5 m s的激光辐照SONY ICX055BL可见光硅CCD器件,实验中由图像采集卡采集得到相机的视频输出,同时用示波器检测ICX055BL的输出信号和垂直输出时钟信号。结果表明,在脉冲激光的辐照下,器件比较容易被破坏。研究中将器件作为一个功能整体,破坏机理分析不只局限于CCD的探测、电荷存储、电荷转移的MOS结构部分。结合实验结果和CCD器件的电路特点,初步判断该器件的破坏机理为电路破坏,脉冲激光所产生的信号电荷冲坏了复位的场效应管,使器件整体永久失效。 The SONY ICX055BL visible-light CCD was irradiated by 1 064 nm pulsed laser with the width of 5 ms. In the experiments the video signal was recorded by PC image acquisition card, at the same time the output of ICX055BL was recorded by oscillograph. The damaging mechanism analyses was not limited to MOS part of the CCD which work as the detector, stores and transferrs charge, but took the CCD as a function aggregate. Based on the experimental results and the characters of the CCD device circuit, the IC destruction was due to the circuit damage. That is to say the signal charge packages induced by the pulse laser damaged the reset-FET, which caused the device out of work for ever.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2005年第10期1457-1460,共4页 High Power Laser and Particle Beams
基金 国家863计划项目资助课题
关键词 脉冲激光 可见光CCD 破坏机理 电路 场效应管 Pulsed laser Visible-light CCD Damaging meehanism Cireuit FET
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