摘要
采用计算机辅助设计技术，优化设计了高频ＩＧＢＴ模块的内部结构；利用紧密的布局减小了分布电感；通过ＩＧＢＴ芯片的对称定位和连接路线的最佳选择，使分布电感量相等。同时，亦合理地设计了ＩＧＢＴ模块的内部结构件，改进了ＩＧＢＴ模块的封装工艺。
By usage of CAD,the design of the inner structure of high frequency IGBT module is optimised;the distributed inductance is decreased through a compact arrangement;through the symmetrical position of IGBT wafer and the optimum choice of the connection wire,the distributed inductance is made equal.Meanwhile.by rational design of the inner structure of the IGBT module,the packaging technology of the IGBT module is improved,and the thermal resistance is decreased.
出处
《电力电子技术》
CSCD
北大核心
1996年第2期75-78,共4页
Power Electronics
关键词
模块
双极晶体管
晶体管
封装技术
高频
module
packaging/insulated gate bipolar transistor(IGBT)
