摘要
沉积速率是影响薄膜性能的重要参数,直接影响着薄膜质量的优劣.本文采用磁控溅射方法,在玻璃基底上沉积钛膜.通过对比研究了平衡磁控溅射和非平衡磁控溅射两种工作模式下,靶基距、氩气流量等工艺参数对沉积速率的影响,同时测试了非平衡磁控溅射线圈励磁电流大小变化对薄膜沉积速率的影响.结果表明:磁控溅射源以非平衡模式工作时,线圈励磁电流在60～180 A范围内,沉积速率随励磁电流的调整而变化;磁控溅射薄膜沉积速率随靶基距的增大而下降;相同工艺条件下,非平衡模式下薄膜沉积速率高于平衡模式,且更易受到氩气流量变化的影响.
The film deposition ratio is an important parameter influencing the film property, and hence is worth of researching in order to improve the quality of thin films. The titanium （Ti） films were deposited on glass substrates by conventional magnetron sputtering （MS） and unbalanced magnetron sputtering （BUMS） respectively. The influence of various factors, including target-to-substrate distance, working gases pressure and exciting current of coil, on the deposition ratio of films was experimentally studied. The results indicate the following conclusions. The deposition ratio of films by UMS varies with changes of the current of magnetron field coin from 60 to 120A. The depositions ratio of films declines with the increase of distance between target and substrate. Under otherwise equal conditions, the film deposition ratio by UMS is higher and more influenced with working gases pressure than by MS.
出处
《西安工业学院学报》
2005年第4期307-310,共4页
Journal of Xi'an Institute of Technology
关键词
磁控溅射
非平衡磁控溅射
沉积速率
工艺参数
magnetron sputtering （MS）
unbalanced magnetron sputtering （UBMS）
deposition ratio
technical parameter
