摘要
采用电子回旋共振等离子体化学气相沉积的方法以C4F8和CH4为源气体制备了非晶氟化碳(a-C:F)薄膜.采用傅里叶变换红外光谱(FTIR)和X光电子能谱(XPS)技术分析了a-C:F薄膜化学组分.FTIR分析表明a-C:F薄膜中存在CF=C(1680 cm-1)和位于a-C:F薄膜交联结构末端的CF2=CF (1780 cm-1)结构.C1s峰高斯解叠后结合态与结合能对应关系为:CF3(295 eV),CF2(293 eV),CF(291 eV),C-O(289 eV),C-CFx(x=1～3)(287 eV),以及位于a-C:F薄膜交联结构末端的C-C结合态(285 eV).位于a-C:F薄膜交联结构末端的CF3和C-C结构热稳定性较差,退火后容易生成气态挥发物并导致a-C:F薄膜厚度减小.当C-CFx交联结构增多,且位于a-C:F薄膜交联结构末端的CF3和C-C结构减少时,a-C:F薄膜热稳定性提高.
Fluorinated amorphous carbon （a-C：F） films were deposited at room temperature using C4Fs and CH4 as precursor gases by electron cyclotron resonance chemical vapor deposition （ECR-CVD）. Chemical compositions and bond structures were investigated by Fourier transform infrared （FTIR） spectroscopy and X-ray photoelectron spectroscopy （XPS）. CF = C （ 1680 cm^-1 ）, as well as CF2 = CF （ 1780 cm^-1 ） that acted as termination groups of cross-linking a-C：F structures were identified in the films. Cl s peaks were assigned to CF3（ 295 eV）, CF2 （ 293 eV ）, CF（ 291 eV ）, C- O （ 289 eV ）, C- CF, （ x = 1 - 3 ） （ 287 eV ） and C- C termination bond （ 285 eV ）, respectively. The thermally unstable CF3 and C-C termination bond structures break down after heat treatment through out-gassing,resulting in film thickness reduction.The thermal stability of a-C：F films improved with increasing cross-linked C-CFx bonds and decreasing CF3 and C-C termination bonds.
出处
《真空科学与技术学报》
EI
CAS
CSCD
北大核心
2005年第5期355-357,377,共4页
Chinese Journal of Vacuum Science and Technology
基金
电子元器件可靠性物理及其应用技术国家级重点实验项目(No.51433020205DZ01)
