摘要
通过自制的铝电解电容器模型,利用氧化铝薄膜具有的介电性能,通过电容量法可以准确快捷地计算氧化膜的厚度,并通过显微直接观察法、电解电量法、伏安法进行了验证。得到如下结论:所用铝条样品天然氧化膜的厚度约为8.0nm;在H3PO4溶液中形成的氧化膜厚度随氧化时间变化为50～80nm;阻档层生成率1.219。
It was swiftly to obtain the thickness of alumina film by using of it＇s dielectric property and capacitor model, which was validated by means of EM, electric quantity and volt-ampere. The results show that, the thickness of natural oxide films is about 8.0 nm; the thickness of oxide films formed in H3PO4 solution is varied from 50 nm to 80 nm; r = 1.219 .
出处
《电子元件与材料》
CAS
CSCD
北大核心
2005年第12期64-66,共3页
Electronic Components And Materials
基金
国家自然科学基金资助项目(批准号:50373019)
关键词
电子技术
阳极氧化铝
氧化膜
介电性能
厚度
electronic technology
anodic aluminum oxide （AAO）, oxide film
dielectric property, thickness
