摘要
氮化铝因具有优良的热传导性能、高的电阻率以及与硅相匹配的热膨胀系数而备受人们关注，是优良的电路基板和电子封装材料。尽管氮化铝具有很多优点，但由于合成温度高、过程控制难、制造成本高而阻碍了它的广泛应用。目前，氮化铝的合成方法主要有铝粉直接氮化法、碳热还原法、化学气相沉积法、自蔓延燃烧合成方法和微波合成法等。概述了氮化铝粉体的几种合成方法，以及其反应机理、制造工艺、各工艺优缺点和各种方法的国内外最新研究动态，指出微波合成法具有较好的应用前景。
Aluminum nitride has attracted much attention as an ideal electrical substrate and package material due to its high thermal conductivity, excellent electrical insulation, and thermal expansion coefficient close to that of silicon. The commercial application of AIN is limited by its high synthesis temperature, unruly reacting process and high manufacturing cost, though aluminum nitride has many good properties. At present, the major synthesis methods are as follows： the direct nitridation of aluminium metal, the carbothermal reduction method, gas phase synthesis, selfpropagating combustion synthesis and synthesis by microwave heating. This paper summarizes several synthesis methods of aluminum nitride, including the reacting mechanism, munufature process, the advantages and disadvantages and developments of each method up to the minute; puts forward that the application prospect of combustion synthesis by mierovave is fine.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2005年第F11期314-317,共4页
Materials Reports
基金
高校跨世纪优秀人才培养计划（编号：609）
