摘要
提出了一种结构简单、功能可靠的CMOS过流保护电路。通过增加FOLDBACK功能有效地降低了电路损失的功耗,并且提高了系统的可靠性。在SAMSUNG0.6ΜMCMOS工艺下,HSPICE模拟仿真结果证明该电路工作可靠、性能优良,可广泛应用于功率开关器件如MOSFET的保护电路中。
A low-power high reliability CMOS current limit circuit is proposed, which can lower the circuit＇s power dissipation, and enhance the reliability of the system with the application of foldbck current limit circuit. This circuit is manufactured by SAMSUNG 0.61~m CMOS technology. The Hspice simulation results proved the feasibility of the circuit. It can be applied in power semiconductor, such as MOSFET.
出处
《微电子学与计算机》
CSCD
北大核心
2006年第1期52-54,共3页
Microelectronics & Computer
基金
国家自然科学基金资助项目(60371017)
四川省学术和技术带头人资助项目
