摘要
为了提高蓝宝石化学机械抛光（CMP）效果，对其抛光工艺进行了研究。采用SiO2磨料对蓝宝石衬底片进行抛光，分析了抛光时的温度、pH条件、磨料粒径及浓度，结果表明，采用80nm大粒径、高浓度的SiO2磨料，既可以保证抛光速率，又能得到良好的表面状；当pH值在10～12时，可加速蓝宝石在碱性条件下的化学反应速率，从而提高抛光速率；在30℃时，能较好地平衡化学作用与机械作用，获得平滑表面；加入适量添加剂，可增大反应产物的体积，易于提高机械作用的效果，以获得较高的去除速率。
The sapphire polishing technology is studies to improve the effect of the CMP. The SiO2 abradant is used to polish the sapphire substrate and the temperature, pH value, diameter of the abradant particle and its concentration during the polishing are analyzed. The results show that using the abradant of 80 nm diameter and high concentration can obtain both high polishing rate and good surface topography. When pH value is 10～12, the chemical reactive rate increases to improve the polishing rate. When the temperature is 30℃, the chemical reaction is balanced with the mechanical effect, which makes the surface smooth. Adding the right amount of the additives and increasing the particle size can improve the effect of the mechanical reaction to achieve higher material removal rate.
出处
《微细加工技术》
EI
2005年第4期65-68,共4页
Microfabrication Technology
基金
天津市重大攻关项目资助(043801211)
关键词
蓝宝石
化学机械抛光
纳米硅溶胶
sapphire
chemical mechanical polishing
nano-SiO2 colloid
