摘要
按3∶5的化学计量比进行配料及合成,得到了YAG相的高纯原料;采用Cz法生长了掺杂浓度为5%的Yb:YAG晶体,对晶体的生长工艺进行了研究,如温场结构对晶体生长的影响;并分析了Yb:YAG晶体开裂的影响因素。
This high -purity starting material of YAG was synthesized according to the stoichiometric ratio of 3： 5. The Yb：YAG crystal was grown by Czochralski （Cz） method with the dopant concentration of 5%. The conditions of growth process, such as the effect of the temperature field on the crystal growth, were studied, and the effect factors on the crack of Yb：YAG crystal was analyzed.
出处
《长春理工大学学报（自然科学版）》
2005年第4期113-115,112,共4页
Journal of Changchun University of Science and Technology(Natural Science Edition)
基金
吉林省科技发展计划项目(20030326)
