摘要
运用Mott—Schottky图可分析混凝土中钢筋钝化膜的半导体特性．对饱和氢氧化钙溶液中和混凝土中钢筋钝化膜的测定表明，在-0．8V～0．3V范围，混凝土中钢筋钝化膜的Csc^-2-E呈Mott—Schottky线性关系，且斜率为正，即钢筋钝化膜为n-型半导体，施主密度为10^26m^-3数量级．在本实验条件下，在模拟孔隙液中添加氯离子，钝化膜破坏严重；而硫酸根离子对钢筋钝化膜无明显影响；亚硝酸根离子能缓解和修补氯离子对钢筋钝化膜的破坏．
The semiconductor properties of passivation film on rebar in concrete was analyzed by Mott - Schottky plots. Either in saturated Ca（OH）2 solutions or in concrete, the relation of Csc^-2 - E of rebar electrode shows linear Mott - Schottky relationship when the electrode potential located in the range of - 0.8 V to 0.3 V. It indicates that the passivation film on rebar shows characters of a n - type semiconductor, which has a positive slope of Mott - schottky plots and its donor density in the order of 10^26m^-3. With the addition of chloride ions in simulated concrete pore solution, the passivation film on the rebar electrode destroyed seriously, whereas there was no apparent influence with addition of sulphate ions. Adding nitrite ion can inhibit the corrosion of the rebar.
出处
《腐蚀科学与防护技术》
CAS
CSCD
北大核心
2005年第B12期453-456,共4页
Corrosion Science and Protection Technology
